? 1 ? CXG1176UR 12 pin uqfn (plastic) high power dpdt switch with logic control description this ic can be used in wireless communication systems, for example, w-cdma handsets. the ic has on-chip logic for operation with 2 cmos control inputs. the sony jphemt process is used for low insertion loss and on-chip logic circuit. features ? low insertion loss 2 cmos compatible control line small package size: 12-pin uqfn applications antenna switch for cellular handsets dual-band w-cdma structure gaas jphemt mmic absolute maximum ratings (ta = 25c) bias voltage v dd 7v control voltage vctl 5 v operating temperature topr ?35 to +85 c storage temperature tstg ?65 to +150 c gaas mmics are esd sensitive devices. special handling precautions are required. e04910-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits.
? 2 ? CXG1176UR block diagram and recommended circuit when using this ic, the following external components should be used: c rf : this capacitor is used for rf decoupling and must be used for all applications. cbypass: this capacitor is used for dc line filtering. 100pf is recommended. truth table on state rf4 ? rf3 rf4 ? rf2 rf1 ? rf3 rf1 ? rf2 f1 off off off on f2 off off on off f3 on off on off f4 off on off on cbypass (100pf) f1 f4 f3 c rf c rf rf4 gnd gnd rf3 ctlb ctla v dd gnd rf1 gnd gnd c rf rf2 c rf f5 f2 f6 10 9 8 7 1 2 3 11 12 6 5 4 f5 off on off off f6 on off off off ctlb l h l h ctla l l h h state 1 2 3 4
? 3 ? CXG1176UR dc bias conditions (ta = 25c) item vctl (h) vctl (l) v dd unit v v v min. 2.0 0 2.5 ty p. 2.85 ? 2.85 max. 3.6 0.4 3.6 electrical characteristics (ta = 25c) item insertion loss isolation vswr switching speed aclr harmonics bias current control current unit db db db db ? s dbc dbc dbc dbc a a ty p. 0.25 0.35 25 20 1.2 5 ?60 ?65 ?75 ?75 80 15 max. 0.45 0.55 1.5 10 ?50 ?55 ?60 ?60 150 25 min. 20 15 condition 830 to 885mhz 1920 to 2170mhz 830 to 885mhz 1920 to 2170mhz 50 ? ? 1 ? 1 ? 1 ? 1 v dd = 2.85v vctl (h) = 2.85v symbol il iso. vswr tsw aclr1 aclr2 2fo 3fo i dd ictl state 5mhz 10mhz ? 1 pin = 25dbm, 0/2.85v control, v dd = 2.85v, 830 to 840mhz, 1920 to 1980mhz measurement system noise level: aclr (5mhz) < ?60dbc, (10mhz) < ?65dbc, 2nd harmonics < ?90dbc, 3rd harmonics < ?90dbc
? 4 ? CXG1176UR sony corporation package outline unit: mm lead plating specifications item lead material copper alloy solder composition sn-bi bi:1-4wt% plating thickness 5-18 m spec. pin 1 index c 0.1 s a-b 0.4 0.05 m s c c a-b s 0.05 s max0.02 + 0.09 12pin uqfn (plastic) 0.25 ? 0.03 + 0.09 0.14 ? 0.03 x 4 2.0 4 1 3 9 7 6 12 10 2.0 s 0.4 0.1 0.6 0.55 0.05 4-r0.2 0.26 a b 0.25 0.14 0.07 0.18 sony code eiaj code jedec code package material lead treatment lead material epoxy resin solder plating copper alloy 0.01g package structure uqfn-12p-01 package mass terminal section note:cutting burr of lead are 0.05mm max. solder plating
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